Effect of Velocity on Nanotribiology of Silicon (Si), Germanium (Ge) and Tin (Sn)
Keywords:nanotribology, velocity, model.
Due to constant energetic losses in micro and macro systems, nanotribology remains central in the global scientific research. In this work we developed new models through a combination of bond-orbital model, Tomlinsonâ€™s model and Sangâ€™s equation. Using jump energy models for high and low ionic energy gaps, E which is the energy that prevents the tips jump was calculated for Silicon (Si) Germanium (Ge) and Tin (Sn). Through a combination of Tomlinson model and Sangâ€™s equation temperature model was developed. This model was further modified to obtain other models. These final models were used to investigate the effects of velocity on the nanotribology of Silicon. The results obtained compare favorably with experimental results for silicon found in literature. Hence, the models were also used for Germanium and Tin. There are no experimental results for germanium and tin. Hence, we are predicting experimental results for these semiconductors for the first time using our models.
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